Part Number Hot Search : 
28F01 P3902 E70IE 75N03 101MF EG2601 NDB610AE 50310
Product Description
Full Text Search
 

To Download DMV1500HDFD6 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 (R)
DMV1500HD
DAMPER + MODULATION DIODE FOR CRT TV
Table 1: Main Product Characteristics DAMPER IF(AV) IFpeak (max) VRRM trr (typ) VF (typ) VFP (typ) 6A 12 A 1500 V 150 ns 1.0 V 21 V MODUL. 3A 12 A 600 V 60 ns 1.0 V 5V
1 2 3
DAMPER MODULATION
1
2
3
FEATURES AND BENEFITS

Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2000 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation
TO-220FPAB DMV1500HDFD
3 1 2

TO-220FPAB FD6 Bending DMV1500HDFD6 (optional)
DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220FPAB package includes both the DAMPER diode and the MODULATION diode, thanks to a dedicated design. Assembled on automated line, it offers very low dispersion values on insulating and thermal performances.
Table 2: Order Codes Part Number DMV1500HDFD DMV1500HDFD6 Marking DMV1500HD DMV1500HD
March 2005
REV. 1
1/8
DMV1500HD
Table 3: Absolute Maximum Ratings Symbol VRRM IFpeak IFSM Tstg Tj Parameter Repetitive peak reverse voltage Peak working forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature F = 56kHz tp = 10ms sinusoidal Value Damper 1500 12 75 150 Modul. 600 12 50 Unit V A A C C
-40 to +150
Table 4: Thermal Resistance Symbol Rth(j-c) Parameter Junction to case thermal resistance Value 3.8 Unit C/W
Table 5: Static Electrical Characteristics Value Symbol Parameter Test conditions VR = 1500 V VR = 600 V IF = 6 A IF = 6 A 1.1 1.15 Tj = 25C Typ. IR * VF **
Pulse test:
Tj = 125C Typ. 100 3 1 1 Max. 1000 30 1.35 1.25
Unit
Max. 100 3 1.6 1.4
Reverse leakage current
Damper Modul. Damper Modul.
A
Forward voltage drop
* tp = 5 ms, < 2%
V
** tp = 380 s, < 2% To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations: DAMPER: P = 1.05 x IF(AV) + 0.05 x IF (RMS) MODULATION: P = 0.89 x IF(AV) + 0.055 x IF (RMS)
2
2
Table 6: Recovery Characteristics Value Symbol Parameter Test conditions IF = 100mA IR =100mA Irr = 10mA Damper Typ. Tj = 25C 1000 Max. Modul. Typ. 250 Max. 400 ns 150 250 60 85 Unit
trr
Reverse recovery time
IF = 1A dIF/dt = -50 A/s Tj = 25C VR =30V
2/8
DMV1500HD
Table 7: Turn-On Switching Characteristics Symbol Parameter Test conditions IF = 6 A dIF/dt = 80 A/s VFR = 3 V IF = 6 A dIF/dt = 80 A/s VFR = 2 V IF = 6 A dIF/dt = 80 A/s IF = 6 A dIF/dt = 80 A/s Value Typ. Tj = 100C 330 Max. 470 ns Tj = 100C 85 125 Unit
Damper tfr Forward recovery time Modul.
Damper VFP Peak forward voltage Modul.
Tj = 100C Tj = 100C
21 5
29 V 7.5
Figure 1: Power dissipation versus peak forward current (triangular waveform, =0.45)
PF(AV)(W)
4.5 4.0 3.5
Figure 2: Average forward current versus ambient temperature
IF(AV)(A)
7
Rth(j-a)=Rth(j-c)
6 5
DAMPER diode
3.0 2.5 2.0 1.5
MODULATION diode DAMPER diode
MODULATION diode
4 3 2 1
1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12
T
IP(A)
0 0
=tp/T
25
tp
50
Tamb(C)
75 100 125 150
Figure 3: Forward voltage drop versus forward current (damper diode)
IFM(A)
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Tj=125C (typical values) Tj=25C (maximum values) Tj=125C (maximum values)
Figure 4: Forward voltage drop versus forward current (modulation diode)
IFM(A)
10 9 8 7 6 5 4 3 2
Tj=25C (maximum values) Tj=125C (typical values) Tj=125C (maximum values)
VFM(V)
1 0 0.2 0.4 0.6 0.8 1.0
VFM(V)
1.2 1.4 1.6 1.8
3/8
DMV1500HD
Figure 5: Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c)/Rth(j-c)
1.0 0.9 0.8 3.0 0.7 0.6
MODULATION diode DAMPER diode
Figure 6: Reverse recovery charges versus dIF/dt (damper diode, typical values)
Qrr(C)
4.0 3.5
IF=IP Tj=125C
2.5 2.0 1.5 1.0
0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
0.5
tp(s)
Single pulse
dIF/dt(A/s)
0.0 0.1 1.0 10.0 100.0
Figure 7: Reverse recovery charges versus dIF/dt (modulation diode, typical values)
Qrr(nC)
300
IF=IP Tj=125C
Figure 8: Peak reverse recovery current versus dIF/dt (damper diode, typical values)
IRM(A)
5.0 4.5 4.0 3.5 3.0
IF=IP Tj=125C
250
200
150
2.5 2.0
100
1.5 1.0
50
dIF/dt(A/s)
0 0.1 1.0 10.0 100.0
0.5 0.0 0.1
dIF/dt(A/s)
1.0 10.0
Figure 9: Peak reverse recovery current versus dIF/dt (modulation diode, typical values)
IRM(A)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
IF=IP Tj=125C
Figure 10: Transient peak forward voltage versus dIF/dt (damper diode, typical values)
VFP(V)
40 35 30 25 20 15 10 5
IF=IP Tj=100C
dIF/dt(A/s)
0.0 0.1 1.0 10.0 100.0
dIF/dt(A/s)
0 0 20 40 60 80 100 120 140 160 180 200
4/8
DMV1500HD
Figure 11: Transient peak forward voltage versus dIF/dt (modulation diode, typical values)
VFP(V)
10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200
IF=IP Tj=100C
Figure 12: Forward recovery time versus dIF/dt (damper diode, typical values)
tfr(ns)
600 550 500 450 400 350 300 250 200 150 100
IF=IP VFR=3.0V Tj=100C
dIF/dt(A/s)
50 0 0 20 40 60
dIF/dt(A/s)
80 100 120 140 160 180 200
Figure 13: Forward recovery time versus dIF/dt (modulation diode, typical values)
tfr(ns)
140 120 100
IF=IP VFR=2.0V Tj=100C
Figure 14: Relative variation of dynamic parameters versus junction temperature
IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125C]
1.2
1.0
0.8 80 0.6 60 0.4 40
QRR IRM VFP
20
0.2
dIF/dt(A/s)
0 0 20 40 60 80 100 120 140 160 180 200 0.0 25 50
Tj(C)
75 100 125
Figure 15: Junction capacitance versus reverse voltage applied (typical values)
C(pF)
100
F=1MHz VOSC=30mVRMS Tj=25C
DAMPER diode
10
MODULATION diode
VR(V)
1 1 10 100 1000
5/8
DMV1500HD
Figure 17: TO-220FPAB FD6 Option Package Mechanical Data REF. A B D E F G G1 H L2 L3 L4 L5 L6 L7 M1 M2 R Dia. Figure 18: TO-220FPAB FD6 PCB layout (typical, in millimeters) DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.192 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.7 0.016 0.028 0.6 1 0.024 0.039 4.8 5.3 0.195 0.205 2.2 2.95 0.094 0.106 10 10.7 0.394 0.421 12.7 12.8 0.500 0.504 4.8 Typ. 0.189 Typ. 3.4 4.8 0.150 0.165 2.9 Typ. 0.114 Typ. 2.8 3.2 0.110 0.126 9 9.9 0.354 0.390 3.75 Typ. 0.148 Typ. 7 8 0.276 0.315 1 Typ. 0.039 Typ. 2.9 3.5 0.114 0.138
2.54
7.5 2.2
7.9 1.0
6/8
DMV1500HD
Figure 19: TO-220FPAB Package Mechanical Data REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.9 0.173 0.192 2.5 2.9 0.098 0.114 2.45 2.75 0.096 0.108 0.4 0.7 0.016 0.027 0.6 1 0.024 0.039 1.15 1.7 0.045 0.067 1.15 1.7 0.045 0.067 4.95 5.2 0.195 0.205 2.4 2.7 0.094 0.106 10 10.7 0.393 0.421 16 Typ. 0.630 Typ. 28.6 30.6 1.126 1.205 9.8 10.7 0.385 0.421 15.8 16.4 0.622 0.646 9 9.9 0.354 0.390 2.9 3.5 0.114 0.138
A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Dia.
Table 8: Ordering Information Part Number DMV1500HDFD DMV1500HDFD6 Marking DMV1500HD DMV1500HD Package TO-220FPAB TO-220FPAB F6 Weight 2.4 g 2.4 g Base qty 50 45 Delivery mode Tube Tube
Table 9: Revision History Date 16-Mar-2005 Revision 1 First issue Description of Changes
7/8
DMV1500HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
8/8


▲Up To Search▲   

 
Price & Availability of DMV1500HDFD6

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X